Title :
TA-A3 a simple narrow-channel MOSFET model
Author :
Kamiya, Masashi ; Scharfetter, D.L.
fDate :
11/1/1978 12:00:00 AM
Keywords :
Analytical models; Capacitance; Circuit analysis computing; Circuit simulation; Doping; Electron mobility; Laboratories; MOSFET circuits; Semiconductor process modeling; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1978.19301
