DocumentCode

1061872

Title

TA-A6 threshold and subthreshold characteristics of VMOS FET via a two-dimensional finite element model

Author

Cottrell, P.E. ; Buturla, E.M.

Volume

25

Issue

11

fYear

1978

fDate

11/1/1978 12:00:00 AM

Firstpage

1346

Lastpage

1346

Keywords

Circuits; Electron devices; FETs; Finite element methods; Impurities; MOS devices; Poisson equations; Predictive models; Semiconductor process modeling; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1978.19304

Filename

1479698