Title :
TA-A6 threshold and subthreshold characteristics of VMOS FET via a two-dimensional finite element model
Author :
Cottrell, P.E. ; Buturla, E.M.
fDate :
11/1/1978 12:00:00 AM
Keywords :
Circuits; Electron devices; FETs; Finite element methods; Impurities; MOS devices; Poisson equations; Predictive models; Semiconductor process modeling; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1978.19304
