Title :
TA-A7 A charge-oriented model for MOS transistor capacitances
fDate :
11/1/1978 12:00:00 AM
Keywords :
Avalanche photodiodes; Capacitance; Circuits; Detectors; High speed optical techniques; Indium phosphide; Laboratories; MOS devices; MOSFETs; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1978.19306
