Title :
TA-B4 the temperature dependence of impact ionization rates in GaAs between 20° and 250°C
Author :
Capasso, Federico ; Nahory, R.E. ; Pollack, M.A.
fDate :
11/1/1978 12:00:00 AM
Keywords :
Charge carrier processes; Contracts; Gallium arsenide; Impact ionization; Indium phosphide; Laboratories; Photoelectricity; Polarization; Temperature dependence; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1978.19309
