Title :
TA-B6 photoemission to 1.7 µm from an InP/InGaAs transferred-electron photocathode
Author :
Maloney, Timothy J. ; Gregory, P.E. ; Hyder, S.B. ; Houng, Y.M.
fDate :
11/1/1978 12:00:00 AM
Keywords :
Annealing; Cathodes; Electrons; Heterojunctions; Indium gallium arsenide; Indium phosphide; Laser theory; Photoelectricity; Surface emitting lasers; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1978.19310
