Title :
TP-A2 electronic properties of a characteristic discrete level at the Si-SiO2interface
Author :
Johnson, Noble M. ; Bartelink, D.J. ; McVittie, James P.
fDate :
11/1/1978 12:00:00 AM
Keywords :
Annealing; Capacitance-voltage characteristics; Electron traps; Hydrogen; MOS capacitors; Photonic band gap; Surface treatment; Temperature; Vacuum systems; Wafer bonding;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1978.19312
