Revisited Pseudo-MOSFET Models for the Characterization of Ultrathin SOI Wafers

The pseudo-MOS transistor (Psi-MOSFET characteristics) is a simple and successful technique for the monitoring of silicon-on-insulator (SOI) wafer quality. To characterize modern ultrathin films, a reconsideration and review of Psi-MOSFET physics and models is required. Selected numerical simulations are presented, which shed light on the intriguing features governing Psi-MOSFET characteristics. Updated models accounting for the density of interface states and channel-to-surface coupling effects in ultrathin SOI wafers with passivated and nonpassivated surfaces are derived. These analytical models show excellent agreement with measurement and simulation data.