Title :
WP-A2 the use of a scanned continuous laser beam for annealing of ion implantation damage in silicon
Author :
Gat, A. ; Gibbons, J.F.
fDate :
11/1/1978 12:00:00 AM
Keywords :
Amorphous materials; Annealing; Implants; Ion implantation; Laser beams; Lenses; Semiconductor lasers; Silicon; Surface emitting lasers; Thermal resistance;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1978.19340
