DocumentCode :
1062275
Title :
WP-A3 ambient effects on annealing of phosphorus implanted emitters
Author :
Tseng, W.F. ; Koji, T. ; Mayer, J.W.
Volume :
25
Issue :
11
fYear :
1978
fDate :
11/1/1978 12:00:00 AM
Firstpage :
1357
Lastpage :
1358
Keywords :
Annealing; Bipolar transistors; Degradation; Doping; Fluid flow; Laboratories; Semiconductor device noise; Semiconductor process modeling; Silicon; Steady-state;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1978.19342
Filename :
1479736
Link To Document :
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