Title :
WP-A3 ambient effects on annealing of phosphorus implanted emitters
Author :
Tseng, W.F. ; Koji, T. ; Mayer, J.W.
fDate :
11/1/1978 12:00:00 AM
Keywords :
Annealing; Bipolar transistors; Degradation; Doping; Fluid flow; Laboratories; Semiconductor device noise; Semiconductor process modeling; Silicon; Steady-state;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1978.19342
