Title :
WP-A5 Boron diffusivity in <100> and <111> silicon under oxidation conditions—A study of oxidation-enhanced diffusivity
Author :
Antoniadis, Dimitri A. ; Lin, Alexander ; Gonzalez, Adriana
fDate :
11/1/1978 12:00:00 AM
Keywords :
Boron; Circuit faults; Epitaxial growth; Laboratories; MOS devices; Oxidation; Silicon; Stacking; Temperature distribution; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1978.19343
