WP-A5 Boron diffusivity in <100> and <111> silicon under oxidation conditions—A study of oxidation-enhanced diffusivity

Author

Antoniadis, Dimitri A. ; Lin, Alexander ; Gonzalez, Adriana

Volume

Issue

fYear

1978

fDate

11/1/1978 12:00:00 AM

Firstpage

1358

Lastpage

1358

Keywords

Boron; Circuit faults; Epitaxial growth; Laboratories; MOS devices; Oxidation; Silicon; Stacking; Temperature distribution; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

DOI

10.1109/T-ED.1978.19343

Filename

1479737

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