Title :
WP-A6 thermal oxidation of heavily doped silicon: Physical modeling and device applications
Author :
Ho, Chu Po ; Plummer, James D.
fDate :
11/1/1978 12:00:00 AM
Keywords :
Chemicals; Density measurement; Laboratories; Optical films; Oxidation; Refractive index; Residual stresses; Semiconductor films; Silicon; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1978.19344
