Title :
WP-B3 athermal annealing of a native defect in high-quality GaP LEC crystals
Author :
Mizuta, M. ; Yoshino, Junki ; Kukimoto, H.
fDate :
11/1/1978 12:00:00 AM
Keywords :
Annealing; Automatic control; Crystals; Diodes; Electron traps; Epitaxial growth; Gallium arsenide; Impurities; Semiconductor process modeling; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1978.19349
