Title :
WP-B4 impurity gradients and interfacial regions in epitaxial GaAs
Author :
Nichols, K.H. ; Wolfe, C.M.
fDate :
11/1/1978 12:00:00 AM
Keywords :
Capacitance measurement; Conductivity; Epitaxial growth; Gallium arsenide; Impurities; Laboratories; Semiconductor materials; Semiconductor process modeling; Substrates; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1978.19350
