DocumentCode :
1062367
Title :
WP-B5 the mechanism of Schottky-barrier pinning on III-V semiconductors
Author :
Spicer, W.E. ; Lindau, I. ; Chye, P. ; Su, Chun-Yi ; Pianetta, P. ; Garner, C.M.
Volume :
25
Issue :
11
fYear :
1978
fDate :
11/1/1978 12:00:00 AM
Firstpage :
1360
Lastpage :
1361
Keywords :
Dielectrics and electrical insulation; Gallium arsenide; Heterojunctions; III-V semiconductor materials; Molecular beam epitaxial growth; Photonic band gap; Semiconductor materials; Semiconductor-metal interfaces; Substrates; Synchrotron radiation;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1978.19351
Filename :
1479745
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1062367
