Title :
WP-B6 investigation of heterojunctions for MIS devices with insulating AlxGa1-xAs on n-type GaAs
Author :
Cho, Andrew Y. ; Lang, D.V. ; Nicollian, E.H. ; Foy, P.W.
fDate :
11/1/1978 12:00:00 AM
Keywords :
Dielectric devices; Dielectrics and electrical insulation; FETs; Gallium arsenide; Heterojunctions; Interface states; MIS devices; Molecular beam epitaxial growth; Substrates; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1978.19352
