Title :
WP-B7 on the behavior of buried oxygen implanted layers in highly doped GaAs
Author :
Grote, N. ; Krautle, H. ; Beneking, H.
fDate :
11/1/1978 12:00:00 AM
Keywords :
Annealing; Epitaxial layers; Gallium arsenide; Hydrogen; Insulation; Protons; Semiconductor materials; Substrates; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1978.19353
