DocumentCode

1062391

Title

WP-B7 on the behavior of buried oxygen implanted layers in highly doped GaAs

Author

Grote, N. ; Krautle, H. ; Beneking, H.

Volume

25

Issue

11

fYear

1978

fDate

11/1/1978 12:00:00 AM

Firstpage

1361

Lastpage

1361

Keywords

Annealing; Epitaxial layers; Gallium arsenide; Hydrogen; Insulation; Protons; Semiconductor materials; Substrates; Temperature;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1978.19353

Filename

1479747