• DocumentCode
    1062420
  • Title

    A method for the characterization of p+-n-n+diodes using DC measurements

  • Author

    Elsaid, Mohamed H. ; Roulston, David J.

  • Author_Institution
    Ain Shams University, Cairo, Egypt
  • Volume
    25
  • Issue
    12
  • fYear
    1978
  • fDate
    12/1/1978 12:00:00 AM
  • Firstpage
    1365
  • Lastpage
    1368
  • Abstract
    An experimental technique using only dc terminal measurements with a special set of masks is presented for characterizing device properties of single diffused p+-n-n+diodes. The vertical and lateral current components are separately obtained. The carrier lifetimes in the epitaxial layer and the p+diffusion, and the recombination velocity at the oxide-silicon p+interface are experimentally determined. Examples are given and possible sources of errors are discussed.
  • Keywords
    Area measurement; Charge carrier lifetime; Current measurement; Diodes; Electrical resistance measurement; Electrons; Epitaxial layers; Metallization;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1978.19356
  • Filename
    1479750
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1062420