Title :
A method for the characterization of p+-n-n+diodes using DC measurements
Author :
Elsaid, Mohamed H. ; Roulston, David J.
Author_Institution :
Ain Shams University, Cairo, Egypt
fDate :
12/1/1978 12:00:00 AM
Abstract :
An experimental technique using only dc terminal measurements with a special set of masks is presented for characterizing device properties of single diffused p+-n-n+diodes. The vertical and lateral current components are separately obtained. The carrier lifetimes in the epitaxial layer and the p+diffusion, and the recombination velocity at the oxide-silicon p+interface are experimentally determined. Examples are given and possible sources of errors are discussed.
Keywords :
Area measurement; Charge carrier lifetime; Current measurement; Diodes; Electrical resistance measurement; Electrons; Epitaxial layers; Metallization;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1978.19356
