Title :
Highly Efficient Packaged 11–13 GHz Power Amplifier in SiGe-Technology With 37.3% of PAE
Author :
Gerlich, S. ; Weger, P.
Author_Institution :
Dept. of Circuit Design, Brandenburg Univ. of Technol. Cottbus-Senftenberg, Cottbus, Germany
Abstract :
A power amplifier for a frequency range of 11-13 GHz that is incorporated in 0.35 μm SiGe-technology is presented in this letter. The two-stage push-pull amplifier uses monolithically integrated transformers for input and interstage matching and a monolithically integrated modified LC-balun as an output-matching network. For stabilization purposes and gain improvement in the operating frequency range a passive frequency selective feedback in parallel to the base-collector was introduced. The power amplifier is mounted on a 7 × 7 mm VQFN package. From a single 1.8 V voltage supply, the amplifier has a power-added efficiency of greater than 30% from 11.2 to 13 GHz with a maximum of 37.3% at 12.5 GHz. The maximum output power is 23.4 dBm (saturation), as measured in the continuous mode.
Keywords :
Ge-Si alloys; MMIC power amplifiers; baluns; bipolar MMIC; circuit feedback; electronics packaging; heterojunction bipolar transistors; LC-balun; MMIC power amplifiers; SiGe; VQFN package; frequency 11 GHz to 13 GHz; heterojunction bipolar transistors; interstage matching; monolithically integrated transformers; passive frequency selective feedback; size 0.35 mum; size 7 mm; two-stage push-pull amplifier; voltage 1.8 V; Impedance; Impedance matching; Power generation; Semiconductor device measurement; Silicon germanium; Transistors; Transmission line measurements; LC-balun; Power amplifier (PA); SiGe HBT;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2013.2278285
