• DocumentCode
    1062500
  • Title

    A high-speed MoSi2-gate 8-kbit read-only memory made with silicon-gate compatible processing

  • Author

    Mochizuki, Tohru ; Ohuchi, Kazunori

  • Author_Institution
    NEC-Toshiba Information System Company, Ltd., Kawasaki, Japan
  • Volume
    25
  • Issue
    12
  • fYear
    1978
  • fDate
    12/1/1978 12:00:00 AM
  • Firstpage
    1409
  • Lastpage
    1411
  • Abstract
    A high-speed n-channel MoSi2-gate 8-kbit E/D ROM was fabricated with a process similar to the Si gate process. The MoSi2gate ROM achieved higher operating speed than the poly Si gate ROM due to the lower distributed resistance of the interconnection lines. The result was in good agreement with the computor simulation result.
  • Keywords
    Conducting materials; Conductivity; Contracts; Electrodes; Electron devices; Photovoltaic systems; Read only memory; Research and development; Silicon; Solar power generation;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1978.19364
  • Filename
    1479758
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1062500