Title :
A high-speed MoSi2-gate 8-kbit read-only memory made with silicon-gate compatible processing
Author :
Mochizuki, Tohru ; Ohuchi, Kazunori
Author_Institution :
NEC-Toshiba Information System Company, Ltd., Kawasaki, Japan
fDate :
12/1/1978 12:00:00 AM
Abstract :
A high-speed n-channel MoSi2-gate 8-kbit E/D ROM was fabricated with a process similar to the Si gate process. The MoSi2gate ROM achieved higher operating speed than the poly Si gate ROM due to the lower distributed resistance of the interconnection lines. The result was in good agreement with the computor simulation result.
Keywords :
Conducting materials; Conductivity; Contracts; Electrodes; Electron devices; Photovoltaic systems; Read only memory; Research and development; Silicon; Solar power generation;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1978.19364
