• DocumentCode
    1062508
  • Title

    An improved GAMBIT device structure

  • Author

    Baliga, B.

  • Author_Institution
    General Electric Company, Research and Development Center, Schenectady, NY
  • Volume
    25
  • Issue
    12
  • fYear
    1978
  • fDate
    12/1/1978 12:00:00 AM
  • Firstpage
    1411
  • Lastpage
    1412
  • Abstract
    An improved device structure is presented for the gate modulated bipolar transistor (GAMBIT). By forming vertical walled collector regions, the GAMBIT voltage-controlled negative-resistance characteristic has been made to occur at low collector voltages without the presence of the threshold voltage observed for the planar diffused devices. The negative resistance of these devices varies exponentially with the reciprocal of the gate bias and increases with collector depth as expected from analysis.
  • Keywords
    Bipolar transistors; Contact resistance; Etching; FETs; Feedback; Joining processes; Low voltage; Shape; Solid state circuits; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1978.19365
  • Filename
    1479759
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1062508