Title :
Effect of heavy doping on the properties of high-low junction
Author :
Sinha, Amitabha ; Chattopadhyaya, S.K.
Author_Institution :
Kurukshetra University, Kurukshetra, India
fDate :
12/1/1978 12:00:00 AM
Abstract :
The minority carrier reflecting properties of the high-low junction have been studied, taking into account the heavy doping effects. It has been observed that the junction leakage velocity attains a minimum value for a particular value of impurity concentration in the heavily doped region, when an empirical relationship giving bandgap narrowing as a function of impurity concentration in silicon is utilized.
Keywords :
Bipolar transistors; Circuits; Doping; Electrical resistance measurement; Electron devices; Impurities; Low voltage; Photovoltaic cells; Silicon; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1978.19366
