DocumentCode :
1062640
Title :
VMOS reliability
Author :
Edwards, John R. ; Bhatti, Inderjit S. ; Fuller, Earl
Author_Institution :
American Microsystems, Inc., Santa Clara, CA
Volume :
26
Issue :
1
fYear :
1979
fDate :
1/1/1979 12:00:00 AM
Firstpage :
43
Lastpage :
48
Abstract :
Whenever a new technology such as VMOS emerges, one key element to its success is the reliability of the products manufactured in that technology. The results of a reliability study to examine the fundamental VMOS device stability, high-temperature operating life (HTOL) failure rates, and electrostatic protection are presented for the VMOS technology. Experimental data for more than five (5) million device-hours of HTOL predict a reliability failure rate of less than 0.01 percent/1000 h at 70°C for products fabricated in the VMOS technology. In addition, an electrostatic protection capability greater than 1800 V is possible with specially designed VMOS input protection devices.
Keywords :
Circuits; Electrostatics; Etching; MOS devices; P-n junctions; Protection; Resistors; Stability; Substrates; Threshold voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1979.19377
Filename :
1479955
Link To Document :
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