Title :
Reliability program and results for a 4K dynamic RAM
Author :
Batdorf, Harold A. ; Hensler, Donald H. ; Wasson, Ronald D.
Author_Institution :
Bell Laboratories, Inc., Allentown, PA
fDate :
1/1/1979 12:00:00 AM
Abstract :
A comprehensive reliability program for an n-channel silicon gate 4K dynamic RAM is described. The program included dynamic high-temperature accelerated aging for various time periods followed by thorough electrical testing. Results including failure mechanism descriptions, acceleration factors, and projected failure rates during system use are included. The actual failure rate during system use is under 100 FIT´s after less than one year of operation.
Keywords :
Accelerated aging; Clocks; DRAM chips; Electronic switching systems; Large scale integration; Logic testing; Manufacturing processes; Packaging; Power generation economics; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1979.19379
