Title :
Properties of 1.4×2.8 μm2 active area M-R elements
Author :
Granley, G.B. ; Daughton, J.M. ; Pohm, A.V. ; Comstock, C.S.
Author_Institution :
Honeywell S.S.E.C., Plymouth, MN, USA
fDate :
11/1/1991 12:00:00 AM
Abstract :
Densely packed magnetoresistive memory cells with active areas of 1.4×2.8 μm2 have been studied experimentally and compared to larger 2.0×12 μm2 cells. The experimental results show that the smaller cells, although having smaller output voltages (0.3 mV), have about the same statistical distributions for critical parameters as the larger cells. Using the current nominal 1.2 μm lithography prototype process, which adds one extra mask to the semiconductor processing, cells with an area of 12.6 μm2 are achieved. By adding another extra mask, the area can be reduced to 5.6 μm2
Keywords :
lithography; magnetic film stores; magnetoresistance; 1.2 micron; active area M-R elements; critical parameters; lithography prototype process; magnetoresistive memory cells; mask; output voltages; statistical distributions; Bandwidth; Conducting materials; Contact resistance; Magnetic anisotropy; Magnetic materials; Magnetic separation; Perpendicular magnetic anisotropy; Saturation magnetization; Sheet materials; Testing;
Journal_Title :
Magnetics, IEEE Transactions on