DocumentCode :
106280
Title :
Design and Evaluation of a High-Frequency LTCC Inductor Substrate for a Three-Dimensional Integrated DC/DC Converter
Author :
Yipeng Su ; Qiang Li ; Lee, Fred C.
Author_Institution :
Center for Power Electron. Syst., State Univ., Blacksburg, VA, USA
Volume :
28
Issue :
9
fYear :
2013
fDate :
Sept. 2013
Firstpage :
4354
Lastpage :
4364
Abstract :
High operating frequency and integration technique are two main approaches to achieve high power density for the switching mode power supply. The emerging gallium nitride (GaN)-based power device enables a multimegahertz high-efficiency point-of-load (POL) converter with high current capability. The low-temperature cofire ceramic (LTCC)-based integration technique successfully extends the three-dimensional (3-D) integrated POL module from the low current level to the high current level (>10 A). This paper presents the low-profile LTCC inductor substrate design and evaluation for a multimegahertz 3-D integrated POL converter with large output current. The detailed study about the impact of frequency on the LTCC inductor shows that the high frequency not only shrinks the volume of the inductor, but also simplifies the inductor structure. The comparison between the LTCC inductor and the discrete inductor demonstrates that the LTCC inductor dramatically boosts the converter light-load efficiency due to its nonlinear inductance. Because of the low-profile design, the power density of the single-phase POL module with LTCC inductor achieves 1.1 kW/in3 at 5 MHz. The performance of the LTCC inductor can be further improved by the inverse coupling, which results in more than 40% core thickness and core loss reduction. Therefore, the power density of a two-phase integrated POL module is pushed to 1.5 kW/in3, which is around ten times of the power density of state-of-the-art industry products with the same current level.
Keywords :
DC-DC power convertors; III-V semiconductors; ceramics; gallium compounds; inductance; integrated circuit design; power inductors; switched mode power supplies; switching convertors; wide band gap semiconductors; 3D integrated POL module; GaN; LTCC-based integration technique; converter light-load efficiency; core loss reduction; current level; discrete inductor; high current capability; high operating frequency; high power density; high-frequency LTCC inductor substrate; inductor structure; inverse coupling; low-profile LTCC inductor substrate design; low-profile design; low-temperature cofire ceramic; multimegahertz 3D integrated POL converter; multimegahertz high-efficiency point-of-load converter; nonlinear inductance; output current; power device; single-phase POL module; switching mode power supply; three-dimensional integrated DC/DC converter; two-phase integrated POL module; Core loss; Density measurement; Inductance; Inductors; Power system measurements; Substrates; Windings; Coupled inductor; low-profile inductor substrate; low-temperature cofire ceramic (LTCC); point-of-load (POL) converter; three-dimensional (3-D) integration;
fLanguage :
English
Journal_Title :
Power Electronics, IEEE Transactions on
Publisher :
ieee
ISSN :
0885-8993
Type :
jour
DOI :
10.1109/TPEL.2012.2236359
Filename :
6395262
Link To Document :
بازگشت