Title :
CMOS Imager With 1024 SPADs and TDCs for Single-Photon Timing and 3-D Time-of-Flight
Author :
Villa, Federica ; Lussana, Rudi ; Bronzi, Danilo ; Tisa, Simone ; Tosi, Alberto ; Zappa, Franco ; Dalla Mora, Alberto ; Contini, Davide ; Durini, Daniel ; Weyers, Sascha ; Brockherde, Werner
Author_Institution :
Dipt. di Elettron., Inf. e Bioingegneria, Politec. di Milano, Milan, Italy
Abstract :
We present a CMOS imager consisting of 32×32 smart pixels, each one able to detect single photons in the 300-900 nm wavelength range and to perform both photon-counting and photon-timing operations on very fast optical events with faint intensities. In photon-counting mode, the imager provides photon-number (i.e, intensity) resolved movies of the scene under observation, up to 100 000 frames/s. In photon-timing, the imager provides photon arrival times with 312 ps resolution. The result are videos with either time-resolved (e.g., fluorescence) maps of a sample, or 3-D depth-resolved maps of a target scene. The imager is fabricated in a cost-effective 0.35-μm CMOS technology, automotive certified. Each pixel consists of a single-photon avalanche diode with 30 μm photoactive diameter, coupled to an in-pixel 10-bit time-to-digital converter with 320-ns full-scale range, an INL of 10% LSB and a DNL of 2% LSB. The chip operates in global shutter mode, with full frame times down to 10 μs and just 1-ns conversion time. The reconfigurable imager design enables a broad set of applications, like time-resolved spectroscopy, fluorescence lifetime imaging, diffusive optical tomography, molecular imaging, time-of-flight 3-D ranging and atmospheric layer sensing through LIDAR.
Keywords :
CMOS image sensors; avalanche diodes; fluorescence; photon counting; time of flight spectra; time-digital conversion; 3-D time-of-flight; CMOS imager; LIDAR; SPAD; TDC; atmospheric layer sensing; automotive certified technology; diffusive optical tomography; fluorescence lifetime imaging; global shutter mode; in-pixel time-to-digital converter; molecular imaging; photoactive diameter; photon-counting mode; reconfigurable imager design; single-photon avalanche diode; single-photon timing; size 0.35 mum; size 30 mum; smart pixels; time-resolved spectroscopy; wavelength 300 nm to 900 nm; word length 10 bit; CMOS integrated circuits; Clocks; Photonics; Radiation detectors; Synchronization; Three-dimensional displays; 2-D imaging; 3-D ranging; CMOS imagers; Photon counting; light detection and ranging (LIDAR); photon tagging; single-photon avalanche diode (SPAD); time-correlated single-photon counting (TCSPC); time-of-flight;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2014.2342197