DocumentCode :
1062982
Title :
The effect of hole versus electron photocurrent on microwave—Optical interactions in IMPATT oscillators
Author :
Vyas, H.P. ; Gutmann, R.J. ; Borrego, J.M.
Author_Institution :
Rensselaer Polytechnic Institute, Troy, NY
Volume :
26
Issue :
3
fYear :
1979
fDate :
3/1/1979 12:00:00 AM
Firstpage :
232
Lastpage :
234
Abstract :
The effect of hole versus electron photocurrent on the microwave properties of IMPATT oscillators is presented and correlated with static I-V characteristics. The composition of the photocurrent was altered by fabricating both flip-chip (FC) and top-mounted (TM) devices and using an optical source with an absorption depth comparable to both the depletion-layer thickness and substrate diffusion length. The importance of the order of magnitude difference in effect of hole versus electron photocurrent is discussed.
Keywords :
Capacitance; Charge carrier processes; Diodes; Electron optics; Laser tuning; Microwave oscillators; Optical saturation; Optical waveguides; Photoconductivity; Radio frequency;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1979.19411
Filename :
1479989
Link To Document :
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