DocumentCode :
1062982
Title :
The effect of hole versus electron photocurrent on microwave—Optical interactions in IMPATT oscillators
Author :
Vyas, H.P. ; Gutmann, R.J. ; Borrego, J.M.
Author_Institution :
Rensselaer Polytechnic Institute, Troy, NY
Volume :
26
Issue :
3
fYear :
1979
fDate :
3/1/1979 12:00:00 AM
Firstpage :
232
Lastpage :
234
Abstract :
The effect of hole versus electron photocurrent on the microwave properties of IMPATT oscillators is presented and correlated with static 
characteristics. The composition of the photocurrent was altered by fabricating both flip-chip (FC) and top-mounted (TM) devices and using an optical source with an absorption depth comparable to both the depletion-layer thickness and substrate diffusion length. The importance of the order of magnitude difference in effect of hole versus electron photocurrent is discussed.
characteristics. The composition of the photocurrent was altered by fabricating both flip-chip (FC) and top-mounted (TM) devices and using an optical source with an absorption depth comparable to both the depletion-layer thickness and substrate diffusion length. The importance of the order of magnitude difference in effect of hole versus electron photocurrent is discussed.Keywords :
Capacitance; Charge carrier processes; Diodes; Electron optics; Laser tuning; Microwave oscillators; Optical saturation; Optical waveguides; Photoconductivity; Radio frequency;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1979.19411
Filename :
1479989
Link To Document :
