• DocumentCode
    1062990
  • Title

    Conduction current injection delay in Read GaAs IMPATT diodes

  • Author

    Adlerstein, M.G. ; Statz, H.

  • Author_Institution
    Raytheon Company, Research Division, Waltham, MA
  • Volume
    26
  • Issue
    3
  • fYear
    1979
  • fDate
    3/1/1979 12:00:00 AM
  • Firstpage
    234
  • Lastpage
    236
  • Abstract
    We find experimentally that, for GaAs Read avalanche diodes, the optimal drift region width is not simply inversely proportional to optimum frequency. This finding can be understood by noting that the injection phase of the avalanche current into the drift region is not 90° with respect to the voltage maximum, but varies as a function of frequency. The experimental observations are in reasonable agreement with solutions of the Read equation which include the reverse junction saturation current. The theoretical fit to the data is relatively insensitive to the avalanche intrinsic response time, and thus we cannot make an independent determination of its value at present.
  • Keywords
    Delay effects; Diodes; Electron mobility; Equations; Frequency; Gallium arsenide; Laboratories; Temperature sensors; Testing; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1979.19412
  • Filename
    1479990