DocumentCode
1062990
Title
Conduction current injection delay in Read GaAs IMPATT diodes
Author
Adlerstein, M.G. ; Statz, H.
Author_Institution
Raytheon Company, Research Division, Waltham, MA
Volume
26
Issue
3
fYear
1979
fDate
3/1/1979 12:00:00 AM
Firstpage
234
Lastpage
236
Abstract
We find experimentally that, for GaAs Read avalanche diodes, the optimal drift region width is not simply inversely proportional to optimum frequency. This finding can be understood by noting that the injection phase of the avalanche current into the drift region is not 90° with respect to the voltage maximum, but varies as a function of frequency. The experimental observations are in reasonable agreement with solutions of the Read equation which include the reverse junction saturation current. The theoretical fit to the data is relatively insensitive to the avalanche intrinsic response time, and thus we cannot make an independent determination of its value at present.
Keywords
Delay effects; Diodes; Electron mobility; Equations; Frequency; Gallium arsenide; Laboratories; Temperature sensors; Testing; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1979.19412
Filename
1479990
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