DocumentCode :
1063
Title :
Design of silicon-based two-dimensional photonic integrated circuits: XOR gate
Author :
Bchir, Riadh ; Bardaoui, Afrah ; Ezzaouia, H.
Author_Institution :
Lab. of Photovoltaic, Energy Center (CRTEn), Hammam-Lif, Tunisia
Volume :
7
Issue :
1
fYear :
2013
fDate :
Feb-13
Firstpage :
25
Lastpage :
29
Abstract :
In this work the authors investigate the design of an XOR gate based on two-dimensionalsilicon photonic crystals. The XOR gate is formed by two dual-ring resonators placed between two waveguides; each secondary waveguide is united in a vertical waveguide, through a specific Y branch, where the waveguide contains the main output. We use 45° ring resonators, before the output, to improve gate efficiency. The optical properties and the distribution field Ez for the proposed gate have been calculated by the finite difference time domain technique. The response time of our logic `XOR` gate is ` 7.2 ps. This photonic gate is of great interest for several applications such as in electronics, in data processing and also in cryptography.
Keywords :
elemental semiconductors; finite difference time-domain analysis; integrated optics; logic gates; optical design techniques; optical resonators; optical waveguides; photonic crystals; silicon; Si; distribution field; dual-ring resonators; finite difference time domain technique; gate efficiency; logic XOR gate; optical design; optical properties; optical waveguides; response time; silicon-based two-dimensional photonic integrated circuits; two-dimensional silicon photonic crystals; vertical waveguide;
fLanguage :
English
Journal_Title :
Optoelectronics, IET
Publisher :
iet
ISSN :
1751-8768
Type :
jour
DOI :
10.1049/iet-opt.2012.0016
Filename :
6490095
Link To Document :
بازگشت