• DocumentCode
    1063
  • Title

    Design of silicon-based two-dimensional photonic integrated circuits: XOR gate

  • Author

    Bchir, Riadh ; Bardaoui, Afrah ; Ezzaouia, H.

  • Author_Institution
    Lab. of Photovoltaic, Energy Center (CRTEn), Hammam-Lif, Tunisia
  • Volume
    7
  • Issue
    1
  • fYear
    2013
  • fDate
    Feb-13
  • Firstpage
    25
  • Lastpage
    29
  • Abstract
    In this work the authors investigate the design of an XOR gate based on two-dimensionalsilicon photonic crystals. The XOR gate is formed by two dual-ring resonators placed between two waveguides; each secondary waveguide is united in a vertical waveguide, through a specific Y branch, where the waveguide contains the main output. We use 45° ring resonators, before the output, to improve gate efficiency. The optical properties and the distribution field Ez for the proposed gate have been calculated by the finite difference time domain technique. The response time of our logic `XOR` gate is ` 7.2 ps. This photonic gate is of great interest for several applications such as in electronics, in data processing and also in cryptography.
  • Keywords
    elemental semiconductors; finite difference time-domain analysis; integrated optics; logic gates; optical design techniques; optical resonators; optical waveguides; photonic crystals; silicon; Si; distribution field; dual-ring resonators; finite difference time domain technique; gate efficiency; logic XOR gate; optical design; optical properties; optical waveguides; response time; silicon-based two-dimensional photonic integrated circuits; two-dimensional silicon photonic crystals; vertical waveguide;
  • fLanguage
    English
  • Journal_Title
    Optoelectronics, IET
  • Publisher
    iet
  • ISSN
    1751-8768
  • Type

    jour

  • DOI
    10.1049/iet-opt.2012.0016
  • Filename
    6490095