DocumentCode :
1063049
Title :
Optimum doping profile for minimum ohmic resistance and high-breakdown voltage
Author :
Hu, Chenming
Author_Institution :
University of California, Berkeley, CA
Volume :
26
Issue :
3
fYear :
1979
fDate :
3/1/1979 12:00:00 AM
Firstpage :
243
Lastpage :
244
Abstract :
The optimum doping profile of a lightly doped layer that introduces the minimum series resistance and sustains a given junction breakdown voltage is derived. The theory applies to a one-dimensional Schottky diode and qualitatively to the collector or drain doping profiles of transistors. The minimum series resistance is found to be about 3.7 × 10-9 
Ω.cm2for an n silicon layer. The optimum doping profile can be closely approximated by a conventional uniformly doped n-n+structure.
Ω.cm2for an n silicon layer. The optimum doping profile can be closely approximated by a conventional uniformly doped n-n+structure.Keywords :
Avalanche breakdown; Breakdown voltage; Doping profiles; Electric resistance; FETs; Manufacturing; Poisson equations; Rectifiers; Schottky diodes; Silicon;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1979.19416
Filename :
1479994
Link To Document :
