• DocumentCode
    1063057
  • Title

    A novel Schottky diode with controlled barrier height

  • Author

    Kajiyama, Kenji ; Ida, Masao ; Sakata, Seizou ; Mizushima, Yoshihiko

  • Author_Institution
    Electrical Communications Laboratories, Musashino, Tokyo, Japan
  • Volume
    26
  • Issue
    3
  • fYear
    1979
  • fDate
    3/1/1979 12:00:00 AM
  • Firstpage
    244
  • Lastpage
    245
  • Abstract
    InxGa1-xAs Schottky diodes are fabricated, and the current sensitivity and conversion loss are measured. Although the present result is preliminary, it supports the previous theoretical prediction of the optimization of the Schottky barrier height (φ = 0.3 V).
  • Keywords
    Doping profiles; Electron devices; Etching; Gallium arsenide; Indium gallium arsenide; MOSFET circuits; Neodymium; Power MOSFET; Schottky diodes; Silicon;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1979.19417
  • Filename
    1479995
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1063057