Title :
Enhancing the Light Extraction of (Alx Ga1 − x) 0.5In0.5P-Based Light-Emitting Diode Fabricated via Geometric Sapphire Shaping
Author :
Lee, Yea-Chen ; Lee, Chia-En ; Kuo, Hao-Chung ; Lu, Tien-Chang ; Wang, Shing-Chung
Author_Institution :
Nat. Chiao Tung Univ., Hsinchu
fDate :
3/1/2008 12:00:00 AM
Abstract :
AlGaInP-based light-emitting diodes (LEDs) with a transparent sapphire substrate were fabricated by the glue-bonding (GB) method. This transparent sapphire substrate is a geometric shaping structure by wet etching processes. Furthermore, the n-side-up surface has a nano-roughened texture by natural mask and chemical wet etching processes. The light output of this novel LED structure could be enhanced about 26.7% (at 350 mA) due to the higher light extraction as compared with the conventional GB-LEDs.
Keywords :
III-V semiconductors; aluminium compounds; bonding processes; etching; gallium compounds; indium compounds; light emitting diodes; AlGaInP; LED; chemical wet etching processes; geometric sapphire shaping; geometric shaping structure; glue-bonding method; light extraction; light output; light-emitting diodes; nanoroughened texture; transparent sapphire substrate; Automotive materials; Displays; Gallium arsenide; Light emitting diodes; Optical materials; Optical reflection; Substrates; Surface texture; Thermal resistance; Wet etching; AlGaInP-based light-emitting diodes (LEDs); geometric sapphire shaping light-emitting diodes (GSS-LEDs); glue bonding (GB); sapphire chemical wet etching;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2008.916905
