Title :
1 µm MOSFET VLSI technology: Part I—An overview
Author :
Yu, Hwa-Nien ; Reisman, Arnold ; Osburn, Carlton M. ; Critchlow, Dale L.
Author_Institution :
IBM Thomas J. Watson Research Center, Yorktown Heights, NY
fDate :
4/1/1979 12:00:00 AM
Abstract :
This paper attempts to provide a technical perspective for a 1 µm MOSFET VLSI technology described in the technical papers that follow. Highlights of various aspects of the technology development are discussed briefly. These include device design, circuit design, hot-electron effects, processing technology, electron-beam lithography, metal silicide interconnections and radiation effects.
Keywords :
Circuit testing; Lithography; Logic arrays; Logic circuits; Logic devices; Logic testing; MOSFET circuits; Paper technology; Programmable logic arrays; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1979.19430
