DocumentCode :
1063211
Title :
1 µm MOSFET VLSI technology: Part III—Logic circuit design methodology and applications
Author :
Cook, Peter W. ; Schuster, Stanley E. ; Parrish, James T. ; Dilonardo, Victor ; Freedman, Darryl R.
Author_Institution :
IBM Thomas J. Watson Research Center, Yorktown Heights, NY
Volume :
26
Issue :
4
fYear :
1979
fDate :
4/1/1979 12:00:00 AM
Firstpage :
333
Lastpage :
346
Abstract :
Logic circuits were designed and fabricated in a 1 µm silicon-gate MOSFET technology. First, conventional random logic chip images using the largely one-dimensional "Weinberger" layout are examined. The image is able to provide chips with an average circuit delay of 3 ns at the 8000 circuit level of integration. Second, two forms of PLA and PLA-based macros are discussed. A dynamic PLA, used in a microprocessor cross section and including 105 product terms, which achieves a 56 ns cycle time is described. A static PLA, designed for 21- ns delay and achieving measured delays from 13 to 21 ns, is also described. Extensions, particularly into low-temperature operation, are discussed.
Keywords :
Circuit optimization; Circuit synthesis; Delay; Image analysis; Integrated circuit measurements; MOSFET circuits; Microprocessors; Programmable logic arrays; Very large scale integration; Wiring;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1979.19432
Filename :
1480010
Link To Document :
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