Title :
A simple current model for short-channel IGFET and its application to circuit simulation
Author_Institution :
Toshiba Corporation, Kawasaki, Japan
fDate :
4/1/1979 12:00:00 AM
Abstract :
The present paper describes a simple one-dimensional current model for an enhancement-insulated field-effect transistor (EIGFET), taking account of the carrier drift-velocity effect and short-channel effect. The model has been used for simulating various characteristics of an EIGFET of channel length of about 1 µm and up, and in the simulation of the waveforms of a ring oscillator where each element transistor has a 1-µm channel length. In either case, fairly good agreement was obtained between simulated results and measurements
Keywords :
Circuit simulation; Current-voltage characteristics; Equations; Large scale integration; Length measurement; Ring oscillators; Silicon; Voltage; Voltage-controlled oscillators;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1979.19446
