Title :
Device linearity comparisons between doped-channel and modulation-doped designs in pseudomorphic Al0.3Ga0.7 As/In0.2Ga0.8As heterostructures
Author :
Yang, Ming-Ta ; Chan, Yi-Jen
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
fDate :
8/1/1996 12:00:00 AM
Abstract :
The linearities of pseudomorphic Al0.3Ga0.7As/In0.2Ga0.8As doped-channel FET´s were characterized by comparing the characteristics of modulation-doped field-effect transistors (FET´s) based on dc and microwave evaluations. By using an undoped high-bandgap layer beneath the gate, the so-called parasitic MESFET-type conduction, which is common in HEMT´s, can therefore be eliminated in doped-channel designs. Therefore, a wide and flat device performance together with a high current driving capability can be achieved in DCFET´s. This linearity improvement in device performance suggests that doped-channel designs are more suitable for application in microwave power devices
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; junction gate field effect transistors; semiconductor heterojunctions; Al0.3Ga0.7As-In0.2Ga0.8 As; DC characteristics; DCFET; HEMT; HFET; MODFET; current driving; device linearity; doped-channel FET; microwave characteristics; microwave power device; modulation-doped FET; parasitic MESFET-type conduction; pseudomorphic heterostructure; undoped high-bandgap layer; Electrons; Epitaxial layers; Gallium arsenide; HEMTs; Linearity; MODFETs; Microwave devices; Microwave transistors; Power generation; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
