DocumentCode :
1063548
Title :
Flip Chip Bonding of 68 
68 MWIR LED Arrays
Author :
Das, Naresh Chandra ; Taysing-Lara, Mónica ; Olver, Kimberley Anderson ; Kiamilev, Fouad ; Prineas, J.P. ; Olesberg, J.T. ; Koerperick, E.J. ; Murray, L.M. ; Boggess, Tom F.
Author_Institution :
Microphotonics Branch, Army Res. Lab., Adelphi, MD
Volume :
32
Issue :
1
fYear :
2009
Firstpage :
9
Lastpage :
13
Abstract :
The flip chip bonding process is optimized by varying the bonding pressure, temperature, and time. The 68times68 mid wave infrared (MWIR) LED array was hybridized onto Si-CMOS driver array with same number of pixels. Each pixel has two indium bumps, one for cathode and another for anode. Both LED array and CMOS drivers have 15-mum-square Indium bump contact pads. We used Karl Suss FC150 flip chip machine for bonding of CMOS driver array onto LED array. From the LED current-voltage characteristics, it is concluded that the optimized flip chip bonding process results in uniform contact and very low contact resistance. Both electrical and optical characteristics of LED array after flip chip bonding are presented.
Keywords :
CMOS integrated circuits; contact resistance; elemental semiconductors; flip-chip devices; integrated circuit bonding; light emitting diodes; silicon; CMOS driver array; LED arrays; Si; bonding pressure; bonding temperature; bonding time; contact resistance; current-voltage characteristics; flip chip bonding; indium bumps; Anodes; Bonding processes; Cathodes; Contacts; Current-voltage characteristics; Flip chip; Indium; Light emitting diodes; Optical arrays; Temperature; CMOS drivers; contact resistance; flip chip bonding; led array;
fLanguage :
English
Journal_Title :
Electronics Packaging Manufacturing, IEEE Transactions on
Publisher :
ieee
ISSN :
1521-334X
Type :
jour
DOI :
10.1109/TEPM.2008.2005062
Filename :
4747415
Link To Document :
