Improved quality-factor of 0.18-μm CMOS active inductor by a feedback resistance design

Author

Chao-Chih Hsiao ; Chin-Wei Kuo ; Chien-Chih Ho ; Yi-Jen Chan

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Taoyuan, Taiwan

Volume

12

Issue

12

fYear

2002

Firstpage

467

Lastpage

469

Abstract

A novel CMOS active inductor approach, which can improve the quality-factor, was presented in this report. A cascode-grounded active inductor circuit topology with a feedback resistance was proposed, which can substantially improve its equivalent inductance and quality-factor. This feedback resistance active inductor was implemented by using a 0.18-μm 1P6M CMOS technology, which demonstrates a maximum quality-factor of 70 with a 5.7-nH inductance at 1.55 GHz, where the self-resonant frequency is 2.5 GHz. The dc power consumption of this active inductor is less than 8 mW.

Keywords

CMOS integrated circuits; Q-factor; UHF integrated circuits; circuit feedback; field effect MMIC; inductors; 0.18 micron; 1.55 GHz; 1P6M CMOS technology; 2.5 GHz; 8 mW; CMOS active inductor; MMIC designs; cascode-grounded active inductor; dc power consumption; equivalent inductance; feedback resistance design; quality-factor; self-resonant frequency; Active inductors; CMOS technology; Circuit topology; Energy consumption; Feedback; Frequency; Impedance; Inductance; Silicon; Spirals;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2002.805931

Filename

1146688