Sensors for the CDF Run2b silicon detector

Author

Akimoto, T. ; Aoki, M. ; Azzi, P. ; Bacchetta, N. ; Behari, S. ; Benjamin, D. ; Bisello, D. ; Bolla, G. ; Booth, P. ; Bortoletto, D. ; Burghard, A. ; Busetto, G. ; Cabrera, S. ; Canepa, A. ; Cardoso, G. ; Chertok, M. ; Ciobanu, C.I. ; Cooke, P. ; Derylo,

Author_Institution

Univ. of Tsukuba, Ibaraki, Japan

Volume

51

Issue

4

fYear

2004

Firstpage

1546

Lastpage

1554

Abstract

We describe the characteristics of silicon microstrip sensors fabricated by Hamamatsu Photonics for the CDF Run 2b silicon detector. A total of 953 sensors, including 117 prototype sensors, have been produced and tested. Five sensors were irradiated with neutrons up to 1.4 ×10¹⁴ n/cm² as a part of the sensor quality assurance program. The electrical and mechanical characteristics are found to be superior in all aspects and fulfill our specifications. We comment on charge-up susceptibility of the sensors that employ a <100> crystal structure.

Keywords

crystal structure; neutron effects; nuclear electronics; position sensitive particle detectors; quality assurance; sensors; silicon radiation detectors; (100) crystal structure; CDF Run2b silicon detector; Hamamatsu Photonics; charge-up susceptibility; electrical characteristics; mechanical characteristics; prototype sensors; sensor quality assurance program; silicon microstrip sensors; Detectors; Mechanical sensors; Microstrip; Neutrons; Optoelectronic and photonic sensors; Prototypes; Quality assurance; Sensor phenomena and characterization; Silicon; Testing;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2004.832586

Filename

1323729