Title :
Reactive ion etching of Fe-Si-Al alloy for thin film head
Author :
Kinoshita, Keizo ; Yamada, Kazuhiko ; Matsutera, Hisao
Author_Institution :
NEC Corp., Kanagawa, Japan
fDate :
11/1/1991 12:00:00 AM
Abstract :
Elevated-temperature reactive ion etching (ET-RIE) in CCI4 containing a gas plasma was investigated on Fe-Si-Al alloy by using an infrared lamp. A high etching rate, 200 nm/min, is obtained at 378°C. Etching residues containing chloride are easily removed by an after-treatment process. Applying this ET-RIE to Fe-Si-Al alloy, a 1.7 μm×3 μm cross section pattern is achieved. No permeability deterioration is detected after ET-RIE. The ET-RIE method is very promising for patterning Fe-based alloy as thin-film head pole material
Keywords :
aluminium alloys; ferromagnetic properties of substances; iron alloys; magnetic heads; magnetic permeability; magnetic thin film devices; silicon alloys; sputter etching; sputtered coatings; 378 C; Fe-Si-Al alloy; Sendust; after-treatment process; high etching rate; infrared lamp; magnetic heads; magnetic permeability; patterning; reactive ion etching; thin-film head pole material; Argon; Gases; Magnetic heads; Magnetic materials; Milling; Plasma temperature; Soft magnetic materials; Sputter etching; Temperature measurement; Transistors;
Journal_Title :
Magnetics, IEEE Transactions on
