Title :
Short-channel effect immunity and current capability of sub-0.1-micron MOSFET´s using a recessed channel
Author :
Bricout, Paul-Henri ; Dubois, Emmanuel
Author_Institution :
Inst. Electronique et de Microelectronique du Nord, Lille, France
fDate :
8/1/1996 12:00:00 AM
Abstract :
Sub-0.1-μm planar and gate recessed MOSFET´s are investigated using both drift-diffusion and Monte Carlo simulations. In nonplanar devices, the influence of the gate corner explains that the threshold voltage roll-off can be almost suppressed. A steeper subthreshold slope (low swing) is also obtained for a channel length shorter than 50 nm when the recessed channel MOSFET is compared to its planar counterpart. The influence of the corner effect on high-current performances is also considered in relation with the electric field profile along the Si/SiO 2 interface
Keywords :
MOSFET; Monte Carlo methods; semiconductor device models; surface potential; 2.5 nm to 0.5 mum; Monte Carlo simulation; Si-SiO2; Si/SiO2 interface; channel length; current capability; drift-diffusion model; electric field profile; gate corner; high-current performance; nonplanar devices; planar gate recessed MOSFET; recessed channel MOSFET; short-channel effect immunity; subthreshold slope; subthreshold swing; surface potential; threshold voltage roll-off suppression; Degradation; Electrons; Helium; Hot carriers; MOS devices; MOSFET circuits; Parasitic capacitance; Power dissipation; Threshold voltage; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
