DocumentCode :
1063663
Title :
Recent advances in electron-beam lithography for the high-volume production of VLSI devices
Author :
Pfeiffer, Hans C.
Author_Institution :
IBM Data Systems Division, Hopewell Junction, NY
Volume :
26
Issue :
4
fYear :
1979
fDate :
4/1/1979 12:00:00 AM
Firstpage :
663
Lastpage :
674
Abstract :
Recent advances in scanning-electron-beam lithography techniques have increased the efficiency of serial exposure by several orders of magnitude over the basic SEM approach. A spectrum of shaped-beam systems which combine projection and scanning techniques has been developed for various lithographic applications. The first generation of electron-beam production systems at IBM have demonstrated the feasibility of the shaped-beam technique under manufacturing conditions. More advanced shaping techniques such as VSS and Character Projection provide the means to make a high-resolution lithography for VLSI technically and economically feasible.
Keywords :
Cathodes; Circuits; Lithography; Optical distortion; Optical imaging; Production systems; Productivity; Semiconductor device manufacture; Variable structure systems; Very large scale integration;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1979.19475
Filename :
1480053
Link To Document :
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