Title :
A review of molecular beam epitaxy for optoelectronic applications
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
fDate :
9/1/1975 12:00:00 AM
Keywords :
Laboratories; Laser excitation; Laser modes; Laser transitions; Molecular beam epitaxial growth; Optical distortion; Optical modulation; Optimized production technology; Semiconductor diodes; Semiconductor lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1975.1068847
