A SiGe MMIC 6-bit PIN diode phase shifter

Author

Teshiba, Mary ; Van Leeuwen, Robert ; Sakamoto, Glenn ; Cisco, Terry

Author_Institution

Raytheon Electron. Syst., El Segundo, CA, USA

Volume

12

Issue

12

fYear

2002

Firstpage

500

Lastpage

501

Abstract

A 6-bit PIN diode phase shifter has been successfully demonstrated at microwave frequencies in a SiGe bipolar technology. A post-silicon polymer dielectric interconnect technology is implemented to achieve low loss microstrip structures on the silicon substrate. The monolithic microwave integrated circuit exhibits flat phase shift, low VSWR, and low insertion loss variation, over the 7- to 11-GHz band. This phase shifter demonstrates the feasibility of integrating SiGe technology into microwave systems.

Keywords

Ge-Si alloys; MMIC phase shifters; bipolar MMIC; microstrip circuits; p-i-n diodes; semiconductor materials; silicon; 6 bit; 7 to 11 GHz; MMIC bipolar technology; PIN diode phase shifter in; Si; Si substrate; SiGe; SiGe MMIC; low loss microstrip structures; monolithic microwave IC; monolithic microwave integrated circuit; post-Si polymer dielectric interconnect technology; Dielectric losses; Dielectric substrates; Germanium silicon alloys; Integrated circuit technology; MMICs; Microwave frequencies; Microwave technology; Phase shifters; Polymers; Silicon germanium;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2002.805534

Filename

1146699