DocumentCode :
1063694
Title :
A radiation monitor for the ZEUS detector at HERA
Author :
Bloch, Ingo ; Borsato, Enrico ; Carlin, Roberto ; Corso, Flavio Dal ; Dannheim, Dominik ; Kahle, Benjamin ; Klimek, Katarzyna ; Kötz, Ulrich ; Kramberger, Gregor ; Longhin, Andrea ; Melzer-Pellmann, Isabell ; Milite, Margherita
Author_Institution :
DESY, Hamburg, Germany
Volume :
51
Issue :
4
fYear :
2004
Firstpage :
1606
Lastpage :
1612
Abstract :
A radiation monitoring and automatic beam-dump system has been installed in the interaction region of the ZEUS experiment during the last upgrade of the electron/positron-proton collider HERA. It is used to prevent the ZEUS silicon microvertex detector (MVD) from beam-background-induced radiation damage during HERA operation. The dose-rate measurement is based on the readout of radiation-induced signal currents from silicon PIN diodes. A precise temperature measurement allows to correct for temperature-induced changes in the offset leakage current of the diodes. The online dose-rate measurement is complemented by a system of radiation field effect transistors (RadFETs), which are sensitive to accumulated surface damage from ionizing radiation. The integrated dose is obtained from the change in the threshold voltage of the RadFET devices. In addition, thermo-luminescense dosimeters measuring the integrated dose of photon and neutron irradiation are used to control and calibrate the online dose measurements. The radiation monitoring system has been designed to measure the dose on a time scale from milliseconds up to the lifetime of the experiment of several years. It provides online information on the actual level of background radiation to both the HERA and ZEUS shift crews and triggers an automatic dump of the lepton beam in case of excessively high instantaneous dose rates.
Keywords :
dosimetry; field effect transistors; gamma-ray effects; neutron effects; p-i-n diodes; radiation monitoring; readout electronics; silicon radiation detectors; thermoluminescence; HERA; RadFET; ZEUS silicon microvertex detector; accumulated surface damage; beam-background-induced radiation damage; diodes; electron-proton collider; electron/positron collider; high instantaneous dose rates; integrated dose; ionizing radiation; lepton beam; neutron irradiation; offset leakage current; online dose-rate measurement; photon irradiation; radiation field effect transistors; radiation monitoring/automatic beam-dump system; radiation-induced signal currents; readout; silicon PIN diodes; temperature-induced changes; thermoluminescense dosimeters; threshold voltage; Current measurement; Diodes; Electron beams; FETs; Ionizing radiation; Leakage current; Radiation detectors; Radiation monitoring; Silicon radiation detectors; Temperature measurement;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2004.832893
Filename :
1323738
Link To Document :
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