DocumentCode
1063728
Title
A small prototype of LSO-SDD anger camera
Author
Fiorini, C. ; Perotti, F. ; Rossi, E. ; Longoni, A. ; Labanti, C.
Author_Institution
Dipt. di Elettronica e Informazione, Politecnico di Milano, Italy
Volume
51
Issue
4
fYear
2004
Firstpage
1625
Lastpage
1630
Abstract
In this paper, we present a small prototype of Anger camera based on a monolithic array of silicon drift detectors (SDDs) coupled to a single LSO scintillator. The SDD photodetector consists of an array of 19 hexagonal units with on-chip JFET and has about 1 cm2 of total sensitive area. The SDD array was already successfully tested with a CsI(Tl) crystal. However, the long scintillation decay time of CsI(Tl) requires the use of a long shaping time to reduce the effect of the ballistic deficit. This requirement does not allow to fully exploit the low electronics noise of the SDD, which, on the contrary, reaches its minimum noise at short shaping times. Moreover, the use of a faster scintillator would improve the overall counting rate capability of the Anger Camera. On the other side, the LSO scintillator is characterized by a lower scintillation conversion efficiency with respect to CsI(Tl) and by a natural background. In this work the performances which could be expected from a LSO-SDD Anger Camera are first evaluated. Then, the results achieved in the experimental characterization of a prototype of this detector are presented. A position resolution better than 1 mm FWHM using a 57Co source (122 keV) has been measured.
Keywords
JFET integrated circuits; cobalt; gamma-ray apparatus; gamma-ray detection; nuclear electronics; photodetectors; radioactive sources; silicon radiation detectors; solid scintillation detectors; 57Co source; Co; CsI(Tl) crystal; FWHM; LSO-SDD Anger camera; SDD array; SDD photodetector; ballistic deficit; faster scintillator; gamma-ray imaging; hexagonal units; long scintillation decay time; long shaping time; lower scintillation conversion efficiency; minimum noise; monolithic array; natural background; on-chip JFET; overall counting rate capability; position resolution; short shaping times; silicon drift detectors; single LSO scintillator; small prototype; total sensitive area; Cameras; Noise shaping; Performance evaluation; Photodetectors; Position measurement; Prototypes; Sensor arrays; Silicon; Solid scintillation detectors; Testing;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2004.832619
Filename
1323741
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