• DocumentCode
    1063728
  • Title

    A small prototype of LSO-SDD anger camera

  • Author

    Fiorini, C. ; Perotti, F. ; Rossi, E. ; Longoni, A. ; Labanti, C.

  • Author_Institution
    Dipt. di Elettronica e Informazione, Politecnico di Milano, Italy
  • Volume
    51
  • Issue
    4
  • fYear
    2004
  • Firstpage
    1625
  • Lastpage
    1630
  • Abstract
    In this paper, we present a small prototype of Anger camera based on a monolithic array of silicon drift detectors (SDDs) coupled to a single LSO scintillator. The SDD photodetector consists of an array of 19 hexagonal units with on-chip JFET and has about 1 cm2 of total sensitive area. The SDD array was already successfully tested with a CsI(Tl) crystal. However, the long scintillation decay time of CsI(Tl) requires the use of a long shaping time to reduce the effect of the ballistic deficit. This requirement does not allow to fully exploit the low electronics noise of the SDD, which, on the contrary, reaches its minimum noise at short shaping times. Moreover, the use of a faster scintillator would improve the overall counting rate capability of the Anger Camera. On the other side, the LSO scintillator is characterized by a lower scintillation conversion efficiency with respect to CsI(Tl) and by a natural background. In this work the performances which could be expected from a LSO-SDD Anger Camera are first evaluated. Then, the results achieved in the experimental characterization of a prototype of this detector are presented. A position resolution better than 1 mm FWHM using a 57Co source (122 keV) has been measured.
  • Keywords
    JFET integrated circuits; cobalt; gamma-ray apparatus; gamma-ray detection; nuclear electronics; photodetectors; radioactive sources; silicon radiation detectors; solid scintillation detectors; 57Co source; Co; CsI(Tl) crystal; FWHM; LSO-SDD Anger camera; SDD array; SDD photodetector; ballistic deficit; faster scintillator; gamma-ray imaging; hexagonal units; long scintillation decay time; long shaping time; lower scintillation conversion efficiency; minimum noise; monolithic array; natural background; on-chip JFET; overall counting rate capability; position resolution; short shaping times; silicon drift detectors; single LSO scintillator; small prototype; total sensitive area; Cameras; Noise shaping; Performance evaluation; Photodetectors; Position measurement; Prototypes; Sensor arrays; Silicon; Solid scintillation detectors; Testing;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2004.832619
  • Filename
    1323741