Transferred-electron logic gates

A two-dimensional modeling technique is used to simulate GaAs transferred-electron devices operated as a logic gate (the TELD) and as a threshold gate. The simple logic gate has a good transfer characteristic but is shown sensitive to bias variations and operates with monostable output. For an input logic swing of 0.6 V and a fanout of 2, a propagation delay of 26 ps and gain of 1.25 is predicted. A bi-stable threshold gate shows a turn-on time of about 80 ps. An FET-triggered two-terminal transferred-electron device is calculated to have propagation delay of 27 ps with a gain of -1.2. Subsequent similar stages would require a noninverted output obtainable from a capacitive electrode on the TED. However, it is shown that additional anode load resistance is required to obtain a significant positive pulse output from such capacitive electrodes. The bias power requirement is estimated to be similar to the simple TELD gate.