Title :
Effect of carrier diffusion on the small-signal behavior of IMPATT diodes
Author :
Brazil, Thomas J. ; Scanlan, Sean O.
Author_Institution :
Plessey Company, Ltd., Northants, England
fDate :
5/1/1979 12:00:00 AM
Abstract :
An approach to the detailed computer simulation of dc and small-signal IMPATT behavior is described in which allowance is made for carrier-diffusion effects. Results are presented for a variety of structures in Si and GaAs, including high-efficiency structures using the latter material. The results from the simulation are also compared with the predictions of a quasi-static theory for a particular case, and good general agreement is observed.
Keywords :
Admittance; Analytical models; Computational modeling; Computer simulation; Diodes; Economic forecasting; Finite difference methods; Linear systems; Partial differential equations; Predictive models;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1979.19494
