• DocumentCode
    1063891
  • Title

    Avalanche injection delay in Lo—Hi junctions and the ionization rate at low electric field

  • Author

    Kajiyama, Kenji ; Mizushima, Yoshihiko

  • Author_Institution
    NTT, Musashino, Tokyo, Japan
  • Volume
    26
  • Issue
    5
  • fYear
    1979
  • fDate
    5/1/1979 12:00:00 AM
  • Firstpage
    806
  • Lastpage
    807
  • Abstract
    Delay time in the avalanche injection is observed in Lo-Hi junctions of n- , p-silicon and germanium. The measured delay time gives an estimate of the electron ionization rate at low electric field.
  • Keywords
    Delay effects; Delay estimation; Electrons; Germanium; Ionization; Silicon; Space charge; Switches; Time measurement; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1979.19497
  • Filename
    1480075
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1063891