Title :
Avalanche injection delay in Lo—Hi junctions and the ionization rate at low electric field
Author :
Kajiyama, Kenji ; Mizushima, Yoshihiko
Author_Institution :
NTT, Musashino, Tokyo, Japan
fDate :
5/1/1979 12:00:00 AM
Abstract :
Delay time in the avalanche injection is observed in Lo-Hi junctions of n- , p-silicon and germanium. The measured delay time gives an estimate of the electron ionization rate at low electric field.
Keywords :
Delay effects; Delay estimation; Electrons; Germanium; Ionization; Silicon; Space charge; Switches; Time measurement; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1979.19497
