Title :
Prediction of Charged Device Model Peak Discharge Current for Microelectronic Components
Author :
Shukla, Vineeta ; Boselli, G. ; Dissegna, Mariano ; Duvvury, Charvaka ; Sankaralingam, Rajkumar ; Rosenbaum, Elyse
Author_Institution :
Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA
Abstract :
This paper presents a computationally efficient methodology to predict the peak current stress experienced by a microelectronic component during a field-induced charge device model (FICDM) electrostatic discharge test. The methodology is applied to a variety of IC components in different types of packages; the peak current values obtained from simulations agree well with those obtained from FICDM measurements.
Keywords :
electrostatic discharge; integrated circuits; FICDM measurements; IC components; electrostatic discharge test; field-induced charge device model; microelectronic component; peak current stress prediction; peak discharge current; Bandwidth; Capacitance; Current measurement; Dielectrics; Discharges (electric); Integrated circuit modeling; Substrates; CDM; ESD; peak current stress;
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2014.2342241
